Semiconducting Epigraphene: A Potential Game-Changer in the Chip Industry

Friday - February 2 2024, 20:52 UTC - 9 months ago

Researchers have successfully developed a method to produce high-quality semiconducting epigraphene (SEG) on silicon carbide, with a bandgap of 0.6 eV and room temperature electron mobility 10-20 times larger than other 2D semiconductors. this could potentially revolutionize the chip industry, with potential applications in 6G communication systems and power-saving electronic devices. However, perfecting and commercializing the process may take time.

Researchers from the Georgia Institute of Technology have recently made a groundbreaking discovery that could potentially revolutionize the chip industry. They have successfully developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer, resulting in a semiconductor with a bandgap of 0.6 eV and with room temperature electron mobility 10 to 20 times larger than other 2D semiconductors currently in use .

Traditionally, creating a bandgap in graphene has been a major challenge for researchers. Attempts to modify the bandgap through quantum confinement or chemical functionalization have proved unsuccessful. However, the team at Georgia Tech, along with other researchers, discovered that semiconducting epigraphene (SEG) on single-crystal silicon carbide substrates has a bandgap of 0.6 eV and room temperature mobilities exceeding 5,000 cm2 V−1 s−1, which is 10 times larger than that of silicon and 20 times larger than that of the other two-dimensional semiconductors .

Their method involves a novel quasi-equilibrium annealing technique to produce high-quality SEG on an underlying SiC substrate. When heated, carbon atoms are transported from the carbon surface to the silicon surface, forming a buffer layer that is chemically bonded to the SiC. This process has the potential for wafer-scale production of single-crystal SEG, which would greatly benefit the electronic device industry .

The potential applications of SEG are numerous. It can be used in components that operate in the terahertz part of the electromagnetic spectrum. This frequency range has been suggested for use in future technologies such as 6G communication systems. Integration of semiconducting graphene in electronic devices could also lead to significant improvements in efficiency and power consumption.The lead researchers do not foresee any major hurdles in producing SEG on a 1-inch wafer scale .

This is significant as normal mass produced chips currently use 12-inch wafers, resulting in about 150 times the volume. However, the SEG over SiC will be a niche market within the already niche chip industry. Therefore, it will take time to perfect and productionize the process.The silicon carbide wafer market, valued at $0.64 billion in 2023, is expected to see significant growth in the coming years due to the increasing demand for high-performance semiconductors .

The global Silicon Wafer market was valued at US$ 17.3 billion in 2022 and is expected to reach approximately $22 billion by 2029. The worldwide SiC wafer market is currently made up of various applications including power devices, electronics, optoelectronics, and others. Currently, there are already commercially available 8-inch silicon carbide wafers.In conclusion, the development of semiconducting epigraphene on silicon carbide has the potential to be a game-changer in the chip industry .

With its high electron mobility, low power consumption, and potential for large-scale production, it could lead to faster and more efficient electronic devices. Although there is still work to be done to perfect and commercialize the process, it is an exciting advancement that has the potential to significantly impact various industries.